Image sensor with embedded photodiode region and fabrication...

Details Image sensor with embedded photodiode region and fabrication... Image sensor with embedded photodiode region and fabrication...

2005-10-13

2008-08-26

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE27133, C257SE25032

Reexamination Certificate

active

07417273

ABSTRACT:
An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a floating diffusion region constituting a node connecting the reset transistor and transfer gate transistor is connected to the gate of the source follower transistor. Further, a photodiode region is embedded below a well region in which the reset transistor and source follower transistor of each pixel are formed. In addition, the photo diode region is not formed below at least a partial region of the floating diffusion region.

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