Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-10
2010-06-29
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27131, C438S048000
Reexamination Certificate
active
07745860
ABSTRACT:
A CMOS image sensor with an effectively increased aperture ratio and moreover with improved optical sensitivity, and a method of manufacture of such a CMOS image sensor is provided a first aspect of the invention is an image sensor, has a pixel region10in which are formed a plurality of pixels each having at least a photodiode, a reset transistor, and a source-follower transistor; and a peripheral circuit region12in which are formed peripheral circuits which process read-out signals read out from the pixel region, a well region PW2in the pixel region PW1is formed to be more shallow than a well region in the peripheral circuit region. Also, reset transistors or source-follower transistors are formed in the shallow well region PW2of the pixel region10, and a photodiode region PHD2is embedded below the transistor well region PW2.
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Korean Office Action dated Oct. 28, 2008 (mailing date), issued in corresponding Korean Patent Application No. 10-2007-7020381.
Inoue Tadao
Ohkawa Narumi
Yamamoto Katsuyoshi
Dickey Thomas L
Erdem Fazli
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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