Image sensor with deep well region and method of fabricating...

Details Image sensor with deep well region and method of fabricating... Image sensor with deep well region and method of fabricating...

2007-01-23

2007-01-23

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S293000, C257S444000, C257S461000, C257S462000

Reexamination Certificate

active

10975299

ABSTRACT:
An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

REFERENCES:
patent: 5005063 (1991-04-01), Janesick
patent: 6594132 (2003-07-01), Avery
patent: 6787383 (2004-09-01), Ikeda et al.
patent: 6821809 (2004-11-01), Abe et al.
patent: 2003/0214595 (2003-11-01), Mabuchi
patent: 2004/0053436 (2004-03-01), Rhodes

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