Image sensor with compact pixel layout

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

active

08044446

ABSTRACT:
Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.

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Taiwanese Search Report issued in counterpart Taiwanese Application No. 094138646, mailed Apr. 23, 2008.
English language translation of Taiwanese Search issued in counterpart Taiwanese Application No. 094138646, mailed Apr. 23, 2008.
English language abstract of JP 11-312822, published Nov. 9, 1999.
English language abstract of JP 2003-282855, published Oct. 3, 2003.
English language abstract of JP 2005-101490, published Apr. 14, 2005.
English language abstract of TW 398078, published Jul. 11, 2000.
English language abstract of TW 486816, published May 11, 2002.
English language abstract of TW 488034 published May 21, 2002.
English language abstract of TW 200414525, published Aug. 1, 2004.

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