Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-03-16
2011-10-25
Nguyen, Dao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08044446
ABSTRACT:
Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.
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English language translation of Taiwanese Search issued in counterpart Taiwanese Application No. 094138646, mailed Apr. 23, 2008.
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English language abstract of JP 2003-282855, published Oct. 3, 2003.
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Intellectual Ventures II LLC
McAndrews Held & Malloy Ltd.
Nguyen Dao
Nguyen Tram H
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