Image sensor with a photodiode array

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S432000, C257S440000

Reexamination Certificate

active

06960799

ABSTRACT:
An array of photodiodes includes regions of a second conductivity type formed in a semiconductive region of a first conductivity type, divided into three interleaved sub-arrays. All the photodiodes of a same sub-array are coated with a same interference filter including at least one insulating layer of determined thickness coated with at least one conductive layer. According to the present invention, the conductive layers are electrically connected to the semiconductive region of a first conductivity type.

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