Image sensor utilizing photo diode, blocking diode and clamping

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257 53, H01L 2714

Patent

active

054225116

ABSTRACT:
The invention seeks to reduce residual image in the vertical direction, which is the most significant drawback in the charge storage system, and further to permit increased speed of operation to be obtained.
To this end, an image sensor of matrix drive type according to the invention comprises m by n diode pairs each including a photo- and a blocking diode PD and BD with the cathode electrodes thereof connected in series, the diode pairs constituting n blocks B.sub.1,B.sub.2 . . . , Bn each of m diode pairs. A clamp diode CD is connected to the juncture between the photo- and blocking diodes PD and BD in each diode pair to clamp the potential on the juncture and thus permit complete and quick charging of the capacitance of the photo-diode PD.

REFERENCES:
patent: 3551761 (1970-12-01), Ruoff et al.
patent: 4496834 (1985-01-01), Nanba et al.
patent: 4826777 (1989-05-01), Ondris

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