Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-05-21
1995-03-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257350, 257354, 257448, 257459, 257461, 25037008, 25037014, H01L 2714, H01L 3100
Patent
active
053998898
ABSTRACT:
An image sensor comprises photo sensing elements, having charge storage capability, for transducing received light into electrical quantities. First switching elements have charge storage capability for transferring the charge stored in the photo sensing elements. Second switching elements have charge storage capability for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer. The image sensor further comprises a first gate pulse generator for generating a first pulse signal to be applied to the first switching elements, and a second gate pulse generator for generating a second pulse signal to be applied to the second switching elements, the amplitude of the second pulse signal being different from that of the first pulse signal. The potential applied to the source electrodes of the second switching elements is different from ground potential.
REFERENCES:
patent: 5196721 (1993-03-01), Miyake et al.
patent: 5196912 (1993-03-01), Matsumoto et al.
patent: 5202575 (1993-04-01), Sakai
Abe Tsutomu
Miyake Hiroyuki
Fuji 'Xerox Co., Ltd.
Ngo Ngan V.
LandOfFree
Image sensor providing output image signal with reduced offset does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image sensor providing output image signal with reduced offset, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor providing output image signal with reduced offset will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1151022