Image sensor photodiodes using a multi-layer substrate and...

Details Image sensor photodiodes using a multi-layer substrate and... Image sensor photodiodes using a multi-layer substrate and...

2011-07-12

2011-07-12

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S252000, C257S290000, C257S291000, C257S293000, C257SE21347, C257SE27133

Reexamination Certificate

active

07977718

ABSTRACT:
The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

REFERENCES:
patent: 7465592 (2008-12-01), Yoo
patent: 7608906 (2009-10-01), Tennant
patent: 2007/0145246 (2007-06-01), Roy et al.
patent: 2007/0187787 (2007-08-01), Ackerson et al.
patent: 2004-221506 (2004-08-01), None
patent: 2005-158834 (2005-06-01), None
patent: 2002-17786 (2002-03-01), None
patent: 2004-95182 (2004-11-01), None
International Search Report from PCT/KR2006/003625.

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