Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S680000, C257S678000, C257S686000
Reexamination Certificate
active
06870208
ABSTRACT:
An image sensor module includes a substrate, a frame layer, a photosensitive chip, a transparent layer and a lens barrel. The substrate has a plurality of lead frame arranged in a matrix to form an upper surface, which is formed with a opening, and a lower surface, which is formed with a cavity penetrated from the opening. The frame layer is integrally formed with the substrate, and arranged at the periphery of the upper surface of the substrate to define a chamber together with the substrate, an internal thread being formed on the inner wall of the chamber. The photosensitive chip is mounted within the cavity of the substrate, and electrically coupled each of the lead frames in a flip chip manner. The transparent layer is covered onto the upper surface of the substrate to cover the opening. The lens barrel has a top surface, a bottom surface opposed to the top surface and a transparent region, a external thread formed between the top surface and the bottom surface, the lens barrel being arranged within the chamber of the frame layer, the external thread being screwed on the internal thread of the chamber.
Chang Jason
Hsieh Figo
Tu Hsiu Wen
Wu Ji-chen
You Irving
Kingpak Technology Inc.
Pro-Techtor Inter-national Services
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