Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2009-03-12
2010-11-30
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S233000, C257S432000, C257S440000
Reexamination Certificate
active
07842980
ABSTRACT:
An image sensor includes a light receiving device in a substrate, a color filter over the light receiving device, a buffer film over the color filter, and a microlens on the buffer film. The microlens has a concave bottom face and a convex top face. The buffer film has a substantially flat top outside the microlens and has a convex top face below the microlens.
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Notice to File a Response/Amendment to the Examination Report from the Korean Intellectual Property Office dated Aug. 31, 2006.
Pham Long
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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