Image sensor, method of manufacturing the same, and method...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C250S214100, C257S292000, C257S461000, C257S464000, C257S225000, C257SE27131, C438S057000

Reexamination Certificate

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07667178

ABSTRACT:
An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.

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patent: 7180150 (2007-02-01), Min
patent: 7214974 (2007-05-01), Shin
patent: 7244632 (2007-07-01), Min
patent: 7271430 (2007-09-01), Park et al.
patent: 2009/0045321 (2009-02-01), Bae et al.
patent: 10-2005-0069083 (2005-07-01), None
patent: 10-2005-0069521 (2005-07-01), None
patent: 10-2005-01115813 (2005-12-01), None
patent: 10-2006-0010899 (2006-02-01), None

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