Image sensor manufacturing method

Details Image sensor manufacturing method Image sensor manufacturing method

1986-02-12

1987-06-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29572, 136258, 156648, 156656, 427 86, C23F 102, B44C 122, H01L 3100

Patent

active

046718532

ABSTRACT:
In a method of manufacturing image sensors, an electrode layer of an opaque metal material is formed on a transparent ceramic substrate and is patterned into individual electrodes in photoengraving process. An amorphous semiconductor layer is deposed over the electrodes formed on the substrate and a common electrode is formed on the amorphous semiconductor layer. The amorphous semiconductor layer is exposed with light rays through the substrate so that each portions of the layer which is located above surface regions of the substrate between the electrodes have high electric resistance.

REFERENCES:
patent: 4528065 (1985-07-01), Yamazaki
patent: 4568409 (1986-02-01), Caplan
D. L. Staebler et al., "Reversible Conductivity Changes in Discharge-Produced Amorphous Si.sup.a ", Applied Physics Letters, vol. 31, No. 4, Aug. 15, 1977, pp. 292-294.

Affiliated with

Also associated with

Rating

Image sensor manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1827319