Image sensor including an anti-reflection pattern and method...

Details Image sensor including an anti-reflection pattern and method... Image sensor including an anti-reflection pattern and method...

2006-03-16

2009-06-02

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S070000

Reexamination Certificate

active

07541212

ABSTRACT:
An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pattern includes a first opening through which the insulation pattern structure is exposed corresponding to the photodiode. A first insulation interlayer structure is formed on the anti-reflection pattern, and the first insulation interlayer structure includes at least one insulation layer and a second opening connected to the first opening. A metal wiring structure is formed in the insulation layer, and a transparent insulation pattern is formed in the first and second openings. A color filter is formed on the transparent insulation pattern, and a micro lens is formed on the color filter.

REFERENCES:
patent: 7009226 (2006-03-01), Sun
patent: 7081647 (2006-07-01), Mushika
patent: 7288424 (2007-10-01), Hunter et al.
patent: 2004/0140564 (2004-07-01), Lee et al.
patent: 2004 207433 (2004-07-01), None
patent: 2004 221532 (2004-08-01), None
patent: 2003 0044330 (2003-06-01), None
English Abstract for Publication No. 1020030044330.
English Abstract for Publication No. 2004-207433.
English Abstract for Publication No. 2004-221532.

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