Image sensor having self-aligned silicide layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257291, 257233, 257382, 257384, H01L 27108

Patent

active

060405937

ABSTRACT:
The present invention is to provide a CMOS image sensor, including a photo-sensing region, in which a buried photodiode is formed, for sensing light from an object; a plurality of transistors electrically coupled to the buried photodiode; silicide layers formed on gates and heavily doped regions except the photo-sensing region; and a plurality of insulating layer patterns which are provided by patterning an insulating layer, wherein the insulating layer patterns include: insulating spacers formed on sidewalls of the gates, which are respectively provided for the plurality of transistors; and a passivation layer formed on the photo-sensing region and on a sidewall of neighboring one of the gates.

REFERENCES:
patent: 5841159 (1998-11-01), Lee et al.
patent: 5880495 (1999-03-01), Chen

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