Image sensor having self-aligned and overlapped photodiode...

Details Image sensor having self-aligned and overlapped photodiode... Image sensor having self-aligned and overlapped photodiode...

2007-01-03

2009-08-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S584000, C257SE31057, C257SE21334

Reexamination Certificate

active

07579208

ABSTRACT:
An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.

REFERENCES:
patent: 3787962 (1974-01-01), Yoshida et al.
patent: 5233181 (1993-08-01), Kwansnick et al.
patent: 5668397 (1997-09-01), Davis et al.
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6060732 (2000-05-01), Murakami et al.
patent: 6251700 (2001-06-01), Lin et al.
patent: 6306676 (2001-10-01), Stevens et al.
patent: 6376871 (2002-04-01), Arai
patent: 6379992 (2002-04-01), Jo
patent: 6465859 (2002-10-01), Fujiwara et al.
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 6507365 (2003-01-01), Nakamura et al.
patent: 6566151 (2003-05-01), Yeh et al.
patent: 6617189 (2003-09-01), Lin et al.
patent: 6642076 (2003-11-01), Yaung et al.
patent: 6660553 (2003-12-01), Kimura et al.
patent: 6861686 (2005-03-01), Lee et al.
patent: 6903322 (2005-06-01), Nakashima
patent: 6995411 (2006-02-01), Yaung et al.
patent: 7006186 (2006-02-01), Chung
patent: 7372497 (2008-05-01), Weng et al.
patent: 2003/0173585 (2003-09-01), Kimura et al.
patent: 2003/0197238 (2003-10-01), Park
patent: 2006/0121640 (2006-06-01), Kim
patent: 2007/0278518 (2007-12-01), Chen et al.
patent: 1444293 (2003-09-01), None
patent: 2002-231915 (2002-08-01), None
patent: 2000-0006427 (2000-01-01), None
patent: 2000-0041446 (2000-07-01), None
patent: 2001-0021371 (2001-03-01), None
patent: 2003-0037870 (2003-05-01), None
patent: 2003-0058291 (2003-07-01), None
patent: WO 9306622 (1993-04-01), None
An Office Action issued on Mar. 20, 2009 in corresponding Chinese Patent Application No. 2005100846497.

Affiliated with

Also associated with

Rating

Image sensor having self-aligned and overlapped photodiode... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor having self-aligned and overlapped photodiode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor having self-aligned and overlapped photodiode... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4135194