Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-02-20
2007-02-20
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S233000, C257S292000, C257SE31084, C257SE27133, C438S060000, C438S075000
Reexamination Certificate
active
11044422
ABSTRACT:
An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.
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Mills & Onello LLP
Parker Kenneth
Samsung Electronics Co,. Ltd.
Warren Matthew E.
LandOfFree
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