Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S292000, C257S432000, C257SE21002
Reexamination Certificate
active
07898011
ABSTRACT:
An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.
REFERENCES:
patent: 2002/0027228 (2002-03-01), Lee
patent: 2004/0016935 (2004-01-01), Kubota et al.
patent: 2006/0154433 (2006-07-01), Onoda
patent: 2007/0052035 (2007-03-01), Nagaraja et al.
patent: 1566842 (2005-08-01), None
patent: 2002-198505 (2002-07-01), None
patent: 2005-005540 (2005-01-01), None
International Search Report for corresponding International Application No. PCT/KR2006/005266 dated Apr. 11, 2007.
Written Opinion of the Ineternational Searching Authority for corresponding International Application No. PCT/KR2006/005266 dated Apr. 11, 2007.
Lee Byoung Su
Oh Se Jung
Rim Jae Young
Won Jun Ho
Kile Park Goekjian Reed & McManus PLLC
Le Dung A.
Siliconfile Technologies Inc.
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