Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2005-11-15
2005-11-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C257S059000, C257S072000, C257S098000, C257SE29282, C349S042000, C349S044000, C349S110000, C349S111000
Reexamination Certificate
active
06964916
ABSTRACT:
A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.
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Chang Chih-Kung
Hsu Hung-Jen
Kuo Chin Chen
Tseng Te-Fu
Weng Fu-Tien
Duane Morris LLP
Koffs Steven E.
Nelms David
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Mai-Huong
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