Image sensor fabrication method and structure

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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C257S059000, C257S072000, C257S098000, C257SE29282, C349S042000, C349S044000, C349S110000, C349S111000

Reexamination Certificate

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06964916

ABSTRACT:
A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.

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Press Release, Hsin-Chu, Taiwan—(Business Wire)—May 1, 2000—“TSMC begins volume production of CMOS image sensors”.
http://www.dpreview.com
ews/0005/00051503tsmc_cmos.asp, 3 pages, visited Mar. 11, 2003.

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