Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-08-16
2011-08-16
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S448000, C257S462000, C257SE31079
Reexamination Certificate
active
07999342
ABSTRACT:
Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.
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Hsu Tzu-Hsuan
Wang Ching-Chun
Yaung Dun-Nian
Haynes and Boone LLP
Parker Allen L
Sefer A.
Taiwan Semiconductor Manufacturing Company Ltd
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