Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-05-11
1994-08-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257291, 257292, 257900, 257448, H01L 2714
Patent
active
053348672
ABSTRACT:
A charge-coupled device (CCD) is provides having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor substrate and then forming a plurality of first gate electrodes on the first nitride film at predetermined intervals apart. A second oxidation film is formed only on an upper surface and along side walls of each of the first gate electrodes. The first nitride film exposed between the first gate electrodes is removed and a second nitride film is formed on the exposed first oxidation film and the second oxidation film. A second gate electrode is then formed on the second nitride film between adjacent first gate electrodes. An image sensor is obtained in which leakage current density between the gate electrodes is reduced and the dielectric characteristic of a gate dielectric film is improved.
REFERENCES:
patent: 4908518 (1990-03-01), Losee et al.
patent: 5189499 (1993-02-01), Izumi et al.
patent: 5237188 (1993-08-01), Iwai et al.
patent: 5254887 (1993-10-01), Fukuda et al.
W. H. Kent, "Charge Distribution in Buried-Channel Charge-Coupled Devices", The Bell System Technical Journal, vol. 52, No. 6, Jul.-Aug. 1973, pp. 1009-1025.
John Y. Chen, "Barrier Lowering in Short-Channel CCD's", IEEE Transactions on Electron Devices, vol. Ed-29, No. 10, Oct. 1982, pp. 1588-1593.
Wolf et al., "Silicon Processing for the VLSI Era, Volume 1: Process Technology", 1986, pp. 534 and 556, Lattice Press, Sunset Beach, Calif., USA.
Oh Heung-kwun
Shin Jong-cheol
Mintel William
Samsung Electronics Co,. Ltd.
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