Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000
Reexamination Certificate
active
10839524
ABSTRACT:
An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric layer, wherein each of the first via walls is formed around each of the sensors. In addition, the image sensor further includes a second inter-metal dielectric layer formed over the first inter-metal dielectric layer and a plurality of second via walls formed in the second inter-metal dielectric layer, wherein each of the second via walls is formed around each of the sensors. Therefore, the light leakage between different pixels and the problem of crosstalk are solved, and the spatial resolution and the photo sensitivity of the image sensor are enhanced.
REFERENCES:
patent: 6507083 (2003-01-01), Tian
patent: 2002/0024001 (2002-02-01), Hiyama et al.
patent: 2003/0197228 (2003-10-01), Okuda et al.
patent: 2004/0036010 (2004-02-01), Hsieh et al.
patent: 2004/0097065 (2004-05-01), Lur et al.
patent: 2004/0180461 (2004-09-01), Yaung et al.
patent: 2005/0040317 (2005-02-01), Yaung
patent: 2006/0097133 (2006-05-01), Yaung
patent: 2000-338613 (2003-11-01), None
patent: 508819 (2002-11-01), None
J.C. Patents
Purvis Sue A.
Sefer Ahmed N.
United Microelectronics Corp.
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