Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Housing or package filled with solid or liquid electrically...
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Housing or package filled with solid or liquid electrically...
C257S099000, C257S100000, C257S787000, C257S790000
Reexamination Certificate
active
06900531
ABSTRACT:
An image sensor device is made using an ultra-thin substrate so that the overall device height is less than 1.0 mm. The image sensor includes a flexible circuit substrate having first and second opposing sides, the first side having a central area and an outer, bonding pad area including bonding pads. A sensor integrated circuit (IC) is attached to the central area of the first side of the circuit substrate. The IC has an active area and a peripheral bonding pad area including bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the circuit substrate bonding pads to electrically connect the IC and the circuit substrate. A wall having a first end with a step and a second end has its second end attached to an outer portion beyond the outer bonding pad area of the first side of the flexible circuit substrate. The wall at least partially surrounds the sensor integrated circuit. A transparent cover is located above the IC such that light can pass through the cover onto the IC active area. Opposing edges of the cover are secured within the step of the wall. Solder balls are attached to the second side of the circuit substrate. The circuit substrate provides for electrical interconnect between the solder balls and the bonding pads on the first side of the circuit substrate.
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PCT International Seaarch Report.
Foong Chee Seng
Mui Kok Wai
Tan Kim Heng
Tan Lan Chu
Bergere Charles E.
Freescale Semiconductor Inc.
Nguyen Dilinh
Pham Long
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