Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-05-13
2008-05-13
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S678000, C257S680000, C257S434000, C257SE31117
Reexamination Certificate
active
07372122
ABSTRACT:
The present invention relates to an image sensor chip package and a method for fabricating the same. In one embodiment of an image sensor chip package, chip pads on a first surface of an image sensor chip are attached to electrode pads of a glass substrate with conductive material. In addition, electrode pads are connected to solder balls via a metal wiring pattern arranged on a second surface of the image sensor chip. As a result, the present invention can provide further miniaturized and thinned image sensor chip packages, reduce fabricating processes, and improve device performance and reliability.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Purvis Sue A.
Rodela Eduardo A.
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