Image sensor applied with device isolation technique for...

Details Image sensor applied with device isolation technique for... Image sensor applied with device isolation technique for...

2011-05-10

2011-05-10

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S156000, C257SE21455, C257SE21614, C257SE25021, C257SE27026, C257SE27111, C257SE29273, C257SE29275

Reexamination Certificate

active

07939386

ABSTRACT:
The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.

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