Image sensor and related method of fabrication

Details Image sensor and related method of fabrication Image sensor and related method of fabrication

2006-01-19

2009-02-24

Vu, David (Department: 2818)

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C438S007000, C438S027000, C438S028000, C438S029000, C438S048000, C438S069000, C257S290000, C257S291000, C257S292000, C257S294000, C257S258000, C257S440000, C257S464000, C257SE27133, C257SE27134, C250S208100, C250S226000

Reexamination Certificate

active

07493713

ABSTRACT:
An image sensor and related method of fabrication are disclosed. The image sensor comprises a plurality of photoelectric conversion regions disposed in a predetermined field of a semiconductor substrate, color filters arranged on the photoelectric conversion regions, and a reflection protection structure disposed between the photoelectric conversion regions and the color filters. The reflection protection structure comprises portions having different thicknesses in relation to the color filters.

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