Image sensor and pixel having an optimized floating diffusion

Details Image sensor and pixel having an optimized floating diffusion Image sensor and pixel having an optimized floating diffusion

2006-10-03

2006-10-03

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S021000, C257S053000, C257S054000, C257S055000, C257S056000, C257S080000, C257S082000, C257S084000, C257S113000, C257S115000, C257S184000, C257S185000, C257S186000, C257S187000, C257S225000, C257S257000, C257S258000, C257S290000, C257S291000, C257S293000, C257S431000, C257S432000, C257S462000, C257S463000

Reexamination Certificate

active

07115925

ABSTRACT:
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the floating diffusion. The floating diffusion is formed from an n-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2. Finally, an amplification transistor is controlled by the floating diffusion.

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patent: 2006/0043437 (2006-03-01), Mouli
patent: 2006/0046338 (2006-03-01), Patrick et al.

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