Image sensor and method of manufacturing the same

Details Image sensor and method of manufacturing the same Image sensor and method of manufacturing the same

2008-02-12

2008-12-02

Purvis, Sue A. (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S446000, C257S292000, C257SE31053, C257SE31067

Reexamination Certificate

active

07459328

ABSTRACT:
An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.

REFERENCES:
patent: 6211509 (2001-04-01), Inoue et al.
patent: 6949445 (2005-09-01), Rhodes et al.
patent: 7148525 (2006-12-01), Mouli

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