Image sensor and method of making same

Details Image sensor and method of making same Image sensor and method of making same

2011-04-05

2011-04-05

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000, C438S781000, C257S432000, C257S440000, C257SE31122

Reexamination Certificate

active

07919350

ABSTRACT:
An image sensor is formed by providing a semiconductor substrate having first, second and third pixel regions and first and second color filters disposed on their respective pixel regions. A photoresist layer is coated over the first and second color filters and the third color pixel region. The photoresist is removed from the first and second color filters, leaving a third color filter of substantially the same height as the first and second color filters. Micro lenses may then be formed on the color filters.

REFERENCES:
patent: 6285065 (2001-09-01), Levy
patent: 6297071 (2001-10-01), Wake
patent: 6818962 (2004-11-01), Yamamoto
patent: 7129108 (2006-10-01), Jang
patent: 2005-142468 (2005-06-01), None
patent: 1020000041458 (2000-07-01), None
patent: 10-2002-0052800 (2002-07-01), None
patent: 1020020052713 (2002-07-01), None
Notice to File a Response/Amendment to the Examination Report and English-language translation issued Nov. 10, 2006 in counterpart Korean application No. 10-2005-0088242.

Affiliated with

Also associated with

Rating

Image sensor and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2720691