Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2007-12-20

2010-02-02

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE27134

Reexamination Certificate

active

07655545

ABSTRACT:
An image sensor includes a first photodiode formed in a semiconductor substrate at a depth reachable by red light, a second photodiode disposed on or over the first photodiode in the semiconductor substrate at a depth reachable by blue light, a third photodiode disposed adjacent to the second photodiode, a plug connected to the first photodiode, transistor structures on the semiconductor substrate and electrically connected with the first, second and third diodes, an insulating layer covering the transistor structures, and microlenses on the insulating layer.

REFERENCES:
patent: 6914314 (2005-07-01), Merrill et al.
patent: 6946715 (2005-09-01), Hong
patent: 7110028 (2006-09-01), Merrill
patent: 7271025 (2007-09-01), Mouli
patent: 2004/0161868 (2004-08-01), Hong
patent: 2004/0232314 (2004-11-01), Hong
patent: 10-2005-0098958 (2005-10-01), None
Sung Kwon Chris Hong; CMOS Image Sensor and Method of Fabrication; esp@cenet database: Publication No. KR20050098958; Publication Date: Oct. 12, 2005; esp@cenet database Worldwide.
Office Action for Korean Application No. 10-2006-0136251; Dated: Dec. 18, 2007; 4 Pages.

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