Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2006-02-28

2006-02-28

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000

Reexamination Certificate

active

07005689

ABSTRACT:
Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.

REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 6040593 (2000-03-01), Park
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 6180969 (2001-01-01), Yang et al.

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