Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2011-08-23

2011-08-23

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S599000, C438S652000, C438S666000, C438S687000, C438S688000

Reexamination Certificate

active

08003505

ABSTRACT:
A method of fabricating an image sensor. A method of fabricating an image sensor may include preparing a substrate including a pixel region and/or a logic region having transistors and/or gates. A method of fabricating an image sensor may include forming a first interlayer dielectric film on and/or over a substrate to cover gates. A method of fabricating an image sensor may include forming a first dielectric film to expose an upper surface of at least one gate over a pixel region. A method of fabricating an image sensor may include forming a second interlayer dielectric film over a first interlayer dielectric film and/or dielectric film. A method of fabricating an image sensor may include forming a plurality of contact holes, which may be simultaneously formed over a second interlayer dielectric film. An image sensor may include contacts formed over a second interlayer dielectric film. An image sensor is disclosed.

REFERENCES:
patent: 7436012 (2008-10-01), Mori et al.
patent: 7723721 (2010-05-01), Udagawa et al.
patent: 2006/0027804 (2006-02-01), Yamazaki et al.
patent: 2010/0230728 (2010-09-01), Okagawa et al.
patent: 2011/0027934 (2011-02-01), Naruse et al.
patent: 10-2004-0017040 (2004-02-01), None
patent: 10-2005-0042698 (2005-05-01), None

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