Image sensor and method for manufacturing the same that uses...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S461000, C257S713000, C257SE23082, C438S064000, C438S122000, C438S527000

Reexamination Certificate

active

07943977

ABSTRACT:
An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor.

REFERENCES:
patent: 6559538 (2003-05-01), Pomerene et al.
patent: 2003/0183267 (2003-10-01), McIntyre et al.
patent: 2006/0000500 (2006-01-01), Sauciuc et al.
patent: 1319896 (2001-10-01), None
patent: 1148558 (2001-10-01), None
patent: 1020010090151 (2001-10-01), None
patent: 1020060002046 (2006-01-01), None

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