Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-01-25

2011-01-25

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S293000, C257S294000, C257S444000, C257SE25032, C257SE31058, C257SE27133

Reexamination Certificate

active

07875917

ABSTRACT:
An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current.

REFERENCES:
patent: 5936261 (1999-08-01), Ma et al.
patent: 7785916 (2010-08-01), Jun
patent: 7795069 (2010-09-01), Jun
patent: 2008/0093695 (2008-04-01), Gao et al.
patent: 2008/0246063 (2008-10-01), Liu et al.
patent: 2009/0065824 (2009-03-01), Hwang
patent: 2009/0065825 (2009-03-01), Hwang
patent: 2009/0065828 (2009-03-01), Hwang
patent: 2000-156488 (2000-06-01), None
Korean Office Action; Korean Patent Application No. 10-2007-0139466, filed Apr. 26, 2008; Korean Intellectual Property Office, Republic of Korea.
Shawming MA and Jeremy A. Theil; “High-Performance Image Sensor Array”; Japan Abstract for Publication No. 2000-156488; Publication Date: Jun. 6, 2000; Japan Patent Office; Japan.

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