Image sensor and method for manufacturing the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C257SE31001, C257S432000, C257S435000, C438S048000, C438S065000

Reexamination Certificate

active

07829371

ABSTRACT:
An image sensor including an interlayer dielectric layer formed over a semiconductor substrate, a color filter layer formed over the interlayer dielectric layer, a planarization layer formed over the color filter, and a microlens array having a gapless, continuous shape and a multilayered structure formed over the planarization layer.

REFERENCES:
patent: 2004/0027680 (2004-02-01), Ozawa
patent: 2005/0101043 (2005-05-01), Chen et al.
patent: 2005/0250241 (2005-11-01), Hong
patent: 2006/0012001 (2006-01-01), Kim
patent: 2006/0145197 (2006-07-01), Baek
patent: 2006/0292734 (2006-12-01), Kim
patent: 1694259 (2005-11-01), None
patent: 1819248 (2006-08-01), None
patent: 1893025 (2007-01-01), None
patent: 2006-351761 (2006-12-01), None
patent: 10-2005-0057968 (2005-06-01), None
patent: 10-2007-0023027 (2007-02-01), None

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