Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2008-12-16
2010-11-02
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE31038
Reexamination Certificate
active
07825494
ABSTRACT:
An image sensor may include a dielectric, a metal interconnection, an align key, a first substrate, a photodiode, and a transparent electrode. The first substrate may include a pixel region, a peripheral circuitry region and a scribe lane. The dielectric may include a metal interconnection and an align key over the first substrate. The photodiode may be formed over the pixel region and the scribe lane. The transparent electrode may be formed over the photodiode. The align key may have a protrusion formed in a center thereof.
REFERENCES:
patent: 5698892 (1997-12-01), Koizumi et al.
patent: 2005/0031995 (2005-02-01), Kang et al.
Dickey Thomas L
Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
The Law Offices of Andrew D. Fortney
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