Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-08-02

2011-08-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000

Reexamination Certificate

active

07989860

ABSTRACT:
An image sensor includes a circuitry, a substrate, an electrical junction region, a high concentration first conduction type region, and a photodiode. The circuitry includes a transistor and is formed on and/or over the substrate. The electrical junction region is formed in one side of the transistor. The high concentration first conduction type region is formed on and/or over the electrical junction region. The photodiode is formed over the circuitry.

REFERENCES:
patent: 6476374 (2002-11-01), Kozlowski
patent: 2003/0213915 (2003-11-01), Chao et al.
patent: 2004/0041930 (2004-03-01), Chao et al.
patent: 2005/0051701 (2005-03-01), Hong
patent: 2006/0214199 (2006-09-01), Inoue et al.
patent: 2009/0039397 (2009-02-01), Chao
patent: 10-2006-0039945 (2006-05-01), None
patent: WO-2007-001146 (2007-01-01), None

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