Image sensor and method for manufacturing the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S440000

Reexamination Certificate

active

07541215

ABSTRACT:
An image sensor and a method for manufacturing the same are provided. The image sensor comprises a pixel region defined on a substrate, an interlayer dielectric on the substrate and comprising a trench above the pixel region, a color filter within the trench, and a microlens on the color filter.

REFERENCES:
patent: 2005/0101049 (2005-05-01), Kim
patent: 2006/0275944 (2006-12-01), Hyun
patent: 2006/0292731 (2006-12-01), Kim
patent: 2007/0158772 (2007-07-01), Boettiger
patent: 2008/0017945 (2008-01-01), Wu et al.

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