Image sensor and method for manufacturing the same

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C257SE21568

Reexamination Certificate

active

07951690

ABSTRACT:
An image sensor includes circuitry, a metal interconnection, a first substrate, a metal ion-implanted insulating layer, and a photodiode. The circuitry is formed on and/or over the first substrate, and the metal ion-implanted insulating layer is formed on and/or over the metal interconnection. The photodiode is formed in a crystalline semiconductor layer over the metal ion-implanted insulating layer.

REFERENCES:
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patent: 2002/0081753 (2002-06-01), Gates et al.
patent: 2002/0142562 (2002-10-01), Chan et al.
patent: 2003/0186521 (2003-10-01), Kub et al.
patent: 2006/0083280 (2006-04-01), Tauzin et al.
patent: 2007/0018266 (2007-01-01), Dupont et al.
patent: 2007/0292773 (2007-12-01), Kim et al.
patent: 20060120260 (2006-11-01), None

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