Image sensor and method for forming the same

Details Image sensor and method for forming the same Image sensor and method for forming the same

2005-11-28

2009-10-13

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE27067

Reexamination Certificate

active

07602034

ABSTRACT:
In an image sensor and a method for forming the same, the method comprises: preparing a substrate having a pixel array region and a peripheral circuit region; sequentially stacking a gate electrode layer and a mask layer on the substrate; patterning the gate electrode layer and the mask layer to form a gate pattern; implanting impurities in the substrate in the pixel array region to form a photoelectric conversion region; and removing the mask layer.

REFERENCES:
patent: 6087685 (2000-07-01), Harada
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 1998-084309 (1998-12-01), None
patent: 2001-0061356 (2001-07-01), None
patent: 10-2002-0045451 (2002-06-01), None
patent: 2002-0045453 (2002-06-01), None
patent: 2002045451 (2002-06-01), None
patent: 10-2004-0007955 (2004-01-01), None
patent: 10-2004-0008538 (2004-01-01), None
Notice to File a Response/Amendment to the Examination Report and English-language translation issued Aug. 31, 2006 in counterpart Korean application No. 10-2004-0098668.

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