Image sensor and method for forming the same

Details Image sensor and method for forming the same Image sensor and method for forming the same

2008-04-29

2008-04-29

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C257SE21121, C257SE21127

Reexamination Certificate

active

11334936

ABSTRACT:
A method for forming an image sensor is provided. The method includes providing a semiconductor substrate having a pixel region and a peripheral circuit region, forming a photoelectric transformation section at the semiconductor substrate of the pixel region, forming a plurality of interlayer dielectrics over the semiconductor substrate with interconnections interposed therebetween, forming a passivation layer, partially patterning the passivation layer at the peripheral circuit region to form a via hole exposing the interconnection and removing the passivation layer and the underlying interlayer dielectric at the pixel region. The method further includes forming a conductive layer to fill the via hole and etching the conductive layer to remove the conductive layer at the pixel region and form a via plug and a conductive pad at the peripheral circuit region. The via plug fills the via hole and the conductive pad protrudes outwardly from the via hole.

REFERENCES:
patent: 6576940 (2003-06-01), Maeda
patent: 7232698 (2007-06-01), Kim
patent: 2006/0183265 (2006-08-01), Oh et al.
patent: 2007/0105360 (2007-05-01), Hong
patent: 10-2001-0067213 (2001-07-01), None
patent: 10-2002-0014519 (2002-02-01), None

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