Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2008-05-20

2008-05-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S533000, C438S534000, C438S576000, C257SE21538

Reexamination Certificate

active

07375019

ABSTRACT:
An image sensor and a method for fabricating the same are disclosed, to improve a contact quality between a contact plug and a source diffusion layer. The image sensor includes a photodiode in an active area of a semiconductor substrate, for receiving incident external light and generating optical charges; a transistor having an impurity diffusion layer electrically connected with the photodiode, for transferring/discharging the optical charges generated by the photodiode to a signal processing circuit; an impurity implantation layer having impurity selectively implanted thereto, for selectively covering the impurity diffusion layer; an insulating interlayer above the semiconductor substrate to cover the photodiode, the transistor, and the impurity implantation layer; an open hole penetrating the insulating interlayer, for selectively opening the impurity diffusion layer; and a contact plug for filling the open hole, and electrically connecting the impurity diffusion layer and a metal line provided above the insulating interlayer.

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