Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2011-01-11

2011-01-11

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257SE27133, C257SE27134, C438S067000, C438S070000, C438S075000

Reexamination Certificate

active

07868366

ABSTRACT:
An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.

REFERENCES:
patent: 20020001936 (2003-07-01), None
patent: 10-2004-0115928 (2006-07-01), None

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