Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2011-02-22

2011-02-22

Pham, Thanhha (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S519000, C257SE29016

Reexamination Certificate

active

07893469

ABSTRACT:
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.

REFERENCES:
patent: 4977096 (1990-12-01), Shimada
patent: 7033895 (2006-04-01), Lee
patent: 7112511 (2006-09-01), Hong
patent: 2002/0019102 (2002-02-01), Ang
patent: 2004/0053457 (2004-03-01), Sohn
patent: 2004/0185595 (2004-09-01), Lee
patent: 2005/0167709 (2005-08-01), Augusto
patent: 2006/0138471 (2006-06-01), Shim
patent: 2006/0160295 (2006-07-01), Kim
patent: 2007/0057147 (2007-03-01), Kim
patent: 20020096136 (2002-12-01), None
patent: 20040003981 (2004-01-01), None

Affiliated with

Also associated with

Rating

Image sensor and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2624794