Image sensor and manufacturing method thereof

Details Image sensor and manufacturing method thereof Image sensor and manufacturing method thereof

2011-08-16

2011-08-16

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S222000, C257S294000, C257SE27133, C257SE31079

Reexamination Certificate

active

07999292

ABSTRACT:
An image sensor can be formed of a first substrate having a readout circuitry, an interlayer dielectric, and lower lines, and a second substrate having a photodiode. The first substrate comprises a pixel portion and a peripheral portion. The readout circuitry is formed on the pixel portion. The interlayer dielectric is formed on the pixel portion and the peripheral portion. The lower lines pass through the interlayer dielectric to electrically connect with the readout circuitry and the peripheral portion. The photodiode is bonded to the first substrate and etched to correspond to the pixel portion. A transparent electrode is formed on the interlayer dielectric on which the photodiode is formed such that the transparent electrode can be connected with the photodiode and the lower line in the peripheral portion. A first passivation layer can be formed on the transparent electrode. In one embodiment, the first passivation layer includes a trench exposing a portion of the transparent electrode. Then, an upper line can be formed on the peripheral portion and in the trench to shield a lateral side of the photodiode.

REFERENCES:
patent: 6927432 (2005-08-01), Holm et al.
patent: 2006/0001121 (2006-01-01), Jeon
patent: 2006/0181629 (2006-08-01), Miyashita et al.
patent: 2007/0018266 (2007-01-01), Dupont et al.
patent: 2008/0079102 (2008-04-01), Chen et al.
patent: 2008/0093695 (2008-04-01), Gao et al.
Office Action dated Jun. 9, 2011 in German Application No. 2008-046036, filed Sep. 5, 2008.

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