Image sensor and manufacturing method thereof

Details Image sensor and manufacturing method thereof Image sensor and manufacturing method thereof

2011-08-23

2011-08-23

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257S290000, C257SE21079, C438S098000, C438S069000, C438S075000

Reexamination Certificate

active

08004027

ABSTRACT:
Provided is an image sensor. The image sensor comprises an interlayer dielectric, lines, and a crystalline semiconductor layer including photodiodes and a device isolation region. The interlayer dielectric can be formed on a first substrate comprising a readout circuitry. The lines pass through the interlayer dielectric to connect with the readout circuitry, and each line is formed according to unit pixel. The crystalline semiconductor layer can be bonded on the interlayer dielectric including the lines. The photodiodes, formed inside the crystalline semiconductor layer, are electrically connected with the lines. The device isolation region comprises conductive impurities and is formed inside the crystalline semiconductor layer so that the photodiodes can be separated according to unit pixels.

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Office Action dated Apr. 26, 2011 in German Application No. 102008046034, filed Sep. 5, 2008.

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