Image sensor and manufacturing method of image sensor

Details Image sensor and manufacturing method of image sensor Image sensor and manufacturing method of image sensor

2009-09-21

2011-12-20

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S293000, C257S294000, C257S444000, C257S458000, C257S656000, C257SE31131

Reexamination Certificate

active

08080840

ABSTRACT:
Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. An uppermost contact plug in the interlayer dielectric layer has a wall structure extending from an uppermost metal in the interlayer dielectric layer. The top surface of the uppermost contact plug makes contact with the image sensing device and is connected to an image sensing device and an uppermost metal of an adjacent pixel.

REFERENCES:
patent: 2003/0213915 (2003-11-01), Chao et al.

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