Image sensor and fabricating method thereof

Details Image sensor and fabricating method thereof Image sensor and fabricating method thereof

2011-04-05

2011-04-05

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257S293000, C257SE27133, C257SE27134

Reexamination Certificate

active

07919798

ABSTRACT:
An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array towards the photodiode.

REFERENCES:
patent: 7728268 (2010-06-01), Sato et al.
patent: 2005/0040317 (2005-02-01), Yaung
patent: 2006/0145211 (2006-07-01), Han
patent: 2006/0145219 (2006-07-01), Lim
patent: 10-2005-0059740 (2005-06-01), None

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