Image sensor and a method for manufacturing the same

Details Image sensor and a method for manufacturing the same Image sensor and a method for manufacturing the same

2011-03-29

2011-03-29

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S057000

Reexamination Certificate

active

07915654

ABSTRACT:
An image sensor and manufacturing method thereof are provided. A semiconductor substrate can include a light blocking region and a light receiving region. A photodiode can be formed in the light blocking region and in the light receiving region. A gate can be disposed at a side of the photodiode in the light receiving region, and a light blocking gate can be disposed on the photodiode in the light blocking region. A salicide layer can be formed on the light blocking gate.

REFERENCES:
patent: 2002/0058353 (2002-05-01), Merrill
patent: 2004/0211884 (2004-10-01), Fang et al.
patent: 2006/0197169 (2006-09-01), Cole
patent: 10-2006-0027662 (2006-03-01), None

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