Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-27
2010-06-15
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257S084000, C257S222000, C257S225000, C257S226000, C257S290000, C257S291000, C257S292000
Reexamination Certificate
active
07737479
ABSTRACT:
An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.
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Huang Chien-Yao
Ko Teng-Yuan
Lin Chia-Huei
Peng Nien-Tsu
Rossi Giuseppe
AltaSens Inc.
Au Bac H
Hsu Winston
Picardat Kevin M
United Microelectronics Corp.
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