Image sensor

Details Image sensor Image sensor

1997-02-20

1999-11-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257239, 257386, 257462, 257463, H01L 31062, H01L 31113, H01L 3106

Patent

active

059775769

ABSTRACT:
In an image sensor 1 wherein an N.sup.+ -type impurity layer 13 to become a light-receiving part of a first conductive type is formed in a well layer 12 of a second conductive type (P-type) provided in a semiconductor substrate 11 of the first conductive type (N-type), an N.sup.- -type impurity layer 14 whose impurity concentration is lower than that of the N.sup.+ -type impurity layer 13 and connected to the lower side of the N.sup.+ -type impurity layer 13 is provided between the N.sup.+ -type impurity layer 13 and the P-type well layer 12. Alternatively, a P-type impurity layer (not shown) whose impurity concentration is lower than that of the P-type well layer 12 and joining with the lower side of the N.sup.+ -type impurity layer 13 may be provided.

REFERENCES:
patent: 5008723 (1991-04-01), van der Have

Affiliated with

Also associated with

Rating

Image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2138837